2N5664
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Bipolar Junction Transistor (BJT) 2N5664. This through-hole component features a TO-66 (TO-213AA) package and is rated for a 200 V collector-emitter breakdown voltage and a maximum collector current of 5 A. It offers a power dissipation of 2.5 W and a minimum DC current gain (hFE) of 40 at 1 A and 5 V. The saturation voltage (Vce(sat)) is a maximum of 400 mV at 300 mA and 3 A. The collector cutoff current is specified at a maximum of 200 nA. This device is suitable for applications in industrial and automotive sectors requiring robust power switching and amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 2.5 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
2N5632
POWER BJT
