2N5661P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5661P is a high-performance NPN bipolar junction transistor designed for demanding applications. This power BJT features a 300V collector-emitter breakdown voltage and a maximum collector current of 2A, with a power dissipation rating of 2W. The device offers a minimum DC current gain (hFE) of 25 at 500mA and 5V, and a saturation voltage (Vce(sat)) of 800mV at 400mA and 2A. With a collector cutoff current of 200nA (max) and an operating junction temperature range of -65°C to 200°C, the 2N5661P is well-suited for power switching and amplification stages in industrial control systems, power supplies, and automotive electronics. The component is housed in a TO-66 (TO-213AA) through-hole package, supplied in bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2 W |
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