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2N5660

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2N5660

TRANS NPN 200V 2A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N5660 is an NPN bipolar junction transistor designed for robust performance. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a maximum collector current of 2 A and boasts a collector-emitter breakdown voltage of 200 V. With a maximum power dissipation of 2 W, it features a minimum DC current gain (hFE) of 40 at 500 mA and 5 V. The saturation voltage (Vce(sat)) is a maximum of 800 mV at 400 mA and 2 A. The 2N5660 is suitable for applications in industrial control, power switching, and telecommunications. It operates within a temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 400mA, 2A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max2 W

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