2N5632
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology NPN Power Bipolar Junction Transistor (BJT), part number 2N5632. This through-hole component is housed in a TO-204AD (TO-3) package, offering robust performance for demanding applications. With a maximum collector current (Ic) of 10 A and a maximum collector-emitter breakdown voltage (Vce) of 100 V, this device is rated for a power dissipation of 150 W. It is suitable for power switching and amplification in industrial control, power supply, and automotive electronics sectors. The 2N5632 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |