2N5631
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5631 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in the industry-standard TO-204AD (TO-3) package, offers a significant collector current capability of 16 A and a maximum power dissipation of 200 W. The device features a substantial collector-emitter breakdown voltage of 140 V, making it suitable for power switching and amplification circuits. Its construction and specifications lend themselves to use in industrial power control, audio amplification, and general-purpose high-power switching applications. The 2N5631 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 200 W |