2N5628
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5628 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a high collector current capability of 10 A and a maximum power dissipation of 116 W. The device features a collector-emitter breakdown voltage of 100 V, making it suitable for power switching and amplification circuits. Its robust construction and operating temperature range of -65°C to 200°C (TJ) ensure reliability in industrial control, power supply, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 116 W |