2N5627
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5627 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a robust TO-204AD (TO-3) package, enabling efficient heat dissipation with a maximum power rating of 116 W. It offers a substantial collector current capability of up to 10 A and a collector-emitter breakdown voltage of 100 V. The 2N5627 is well-suited for power switching, amplification, and voltage regulation circuits across various industrial sectors, including industrial automation, power supplies, and general-purpose amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 116 W |