2N5626
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5626 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component features a collector-emitter breakdown voltage (Vce) of 80V and a continuous collector current (Ic) capability of up to 10A. With a maximum power dissipation of 116W, it is suitable for demanding power switching and amplification tasks. The transistor is housed in a TO-204AD (TO-3) package, facilitating through-hole mounting and effective thermal management. The 2N5626 is utilized in industrial power control, audio amplification, and power supply regulation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 116 W |