2N5625
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5625 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a maximum collector current of 10 A and a power dissipation capability of 116 W. With a collector-emitter breakdown voltage of 80 V, the 2N5625 is suitable for power switching and amplification circuits across various industrial sectors including telecommunications, industrial automation, and power supplies. Its robust construction and significant power handling make it a reliable choice for high-current, high-voltage environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 116 W |