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2N5624

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2N5624

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology PNP Bipolar Junction Transistor, part number 2N5624. This power transistor features an 80V collector-emitter breakdown voltage and a maximum collector current of 10A. With a power dissipation capability of 116W, it is housed in a TO-204AD (TO-3) through-hole package. This component is suitable for various power switching and amplification applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max116 W

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