2N5622
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5622 is an NPN bipolar junction transistor designed for high-power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 60 V. With a significant power dissipation capability of 116 W, the 2N5622 is suitable for demanding power switching and amplification tasks. Its robust construction and performance characteristics make it a reliable choice for industrial control, power supply, and audio amplifier designs. The TO-3 package facilitates efficient heat sinking for sustained operation under heavy loads.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 116 W |