2N5621
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N5621 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage of 60 V and a maximum continuous collector current (Ic) of 10 A. With a substantial power dissipation capability of 116 W, the 2N5621 is suitable for power switching and amplification tasks. It is housed in a robust TO-204AD (TO-3) package, facilitating efficient heat management through its through-hole mounting configuration. This component finds utility in various industrial power control systems and high-reliability electronics where robust performance is paramount.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 116 W |