2N5620
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology PNP Bipolar Junction Transistor (BJT), part number 2N5620, is a high-power device designed for demanding applications. This through-hole component features a 100 V collector-emitter breakdown voltage and a maximum collector current of 5 A. Dissipating up to 58 W of power, it is housed in a TO-204AD (TO-3) package, facilitating efficient thermal management. The 2N5620 is suitable for power switching and amplification circuits across various industries, including industrial control and power supply applications. It offers a Vce saturation of 1.5 V at 500 µA/2.5 mA, ensuring reliable operation in its intended use cases.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 2.5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 58 W |