2N5619
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N5619, a PNP bipolar junction transistor, offers robust performance in demanding applications. This through-hole component, housed in a TO-204AD (TO-3) package, features a 100V collector-emitter breakdown voltage and a maximum collector current of 5A. With a power dissipation capability of 58W, it is well-suited for power switching and amplification circuits. The 2N5619 operates across a wide temperature range of -65°C to 200°C (TJ). Industries such as industrial controls and power supplies commonly utilize this transistor for its reliability and power handling characteristics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 2.5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 58 W |