2N5618
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N5618 is an NPN Bipolar Junction Transistor (BJT) designed for power applications. This through-hole component, housed in a TO-204AD (TO-3) package, features a maximum collector emitter breakdown voltage of 80 V and a continuous collector current capability of 5 A. The device offers a maximum power dissipation of 58 W, making it suitable for demanding power switching and amplification tasks. It finds application in power supply regulation, motor control, and general-purpose power amplification across various industrial sectors. The 2N5618 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 58 W |