2N5617
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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This Microchip Technology PNP Power Bipolar Junction Transistor (BJT), part number 2N5617, is engineered for high-power applications. Featuring a collector-emitter breakdown voltage (Vce) of 80 V and a continuous collector current (Ic) capability of 5 A, this device dissipates up to 58 W. Its through-hole mounting design utilizes the industry-standard TO-204AD (TO-3) package, facilitating robust thermal management. The 2N5617 is suitable for demanding power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 58 W |