2N5616
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5616 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, offers a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of up to 5 A. With a maximum power dissipation of 58 W, it is suitable for demanding power switching and amplification tasks. The 2N5616 is commonly employed in industrial power supplies, motor control circuits, and audio amplification systems where robust performance is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 58 W |