2N5611
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5611 is a high-power PNP bipolar junction transistor (BJT) designed for demanding power switching and amplification applications. This through-hole component features a TO-66 (TO-213AA) package, facilitating robust thermal management with a maximum power dissipation of 25 W. It offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 5 A. The 2N5611 is suitable for use in industrial control systems, power supplies, and audio amplification circuits where reliable high-current switching and power handling are critical. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 25 W |
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