2N5610
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5610 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers robust performance with a maximum collector current (Ic) of 5 A and a power dissipation capability of 25 W. The transistor features a collector-emitter breakdown voltage (Vce) of 80 V. Its operating temperature range extends from -65°C to 200°C, making it suitable for environments requiring thermal stability. Applications for this device include power switching, amplification, and voltage regulation across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 2.5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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