2N5608
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5608 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, features a 25 W power dissipation capability. It supports a collector current of up to 5 A and offers a collector-emitter breakdown voltage of 80 V. The device exhibits a Vce(sat) of 1.5 V at 500 µA base current and 2.5 mA collector current. Operating across a wide temperature range of -65°C to 200°C, the 2N5608 is suitable for use in various industrial and consumer electronics applications requiring robust power switching and amplification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 2.5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5347
PNP TRANSISTORS
JANSG2N2222AUBC/TR
RH SMALL-SIGNAL BJT
