2N5607
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology PNP Bipolar Junction Transistor (BJT) for high-power applications. This through-hole component, identified by the part number 2N5607, features a robust TO-66 (TO-213AA) package, rated for up to 25 Watts of power dissipation. It supports a maximum collector current of 5 Amperes and a collector-emitter breakdown voltage of 80 Volts, making it suitable for demanding power switching and amplification tasks. Common applications include power control circuits, voltage regulation, and audio amplification systems within industrial and consumer electronics. The transistor is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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