2N5606
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5606 is an NPN bipolar junction transistor designed for power applications. This through-hole component features a 60V collector-emitter breakdown voltage and can handle a continuous collector current of up to 5A, with a maximum power dissipation of 25W. The transistor is housed in a TO-66 (TO-213AA) package, facilitating robust thermal management. Its operating temperature range extends from -65°C to 200°C (TJ). This device is suitable for various demanding applications, including power switching and amplification in industrial control systems and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 2.5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
Request a Quote
Clients Also Buy
2N5581
TRANS NPN 50V 0.8A TO46
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
