2N5604
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5604 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 100 V and can handle a continuous collector current of up to 2 A. With a maximum power dissipation of 20 W, the 2N5604 is well-suited for power switching and amplification circuits across various industrial sectors, including consumer electronics and industrial control systems. Its robust construction and specified electrical parameters make it a reliable choice for engineers requiring dependable power transistor performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 20 W |
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