2N5602
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5602 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector current (Ic) of 2 A and a power dissipation capability of 20 W, making it suitable for power switching and amplification circuits. The transistor operates with a collector-emitter breakdown voltage (Vce) of 80 V. Its TO-66 (TO-213AA) package with through-hole mounting facilitates integration into traditional PCB designs. The 2N5602 is utilized in various industrial sectors, including power supplies, motor control, and audio amplification systems, where robust performance and thermal management are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 200µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 20 W |
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