2N5601
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5601 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a TO-66 (TO-213AA) package, enabling robust thermal management with a maximum power dissipation of 20W. The transistor offers an 80V collector-emitter breakdown voltage and a continuous collector current capability of up to 2A. Its low saturation voltage, specified at 850mV @ 200µA/1mA, is critical for efficient power switching and amplification. Operating across a wide temperature range of -65°C to 200°C, the 2N5601 is suitable for use in industrial power control, audio amplification, and general-purpose high-power switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 200µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 20 W |
Request a Quote
Clients Also Buy
2N3440U4
TRANS NPN 250V 1A U4
JANS2N5151U3
POWER BJT
JANSM2N5154L
RH POWER BJT
