2N5600
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5600 is a PNP bipolar junction transistor (BJT) offering a robust 80V collector-emitter breakdown voltage and a continuous collector current capability of 2A. This power transistor dissipates up to 20W, making it suitable for demanding applications. It is supplied in a TO-66 (TO-213AA) through-hole package, facilitating straightforward board integration. The 2N5600 is commonly employed in power switching, amplification circuits, and voltage regulation within industrial controls, automotive systems, and general electronics manufacturing.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 20 W |
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