2N5599
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5599 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a TO-66 (TO-213AA) package, enabling robust thermal management with a maximum power dissipation of 20W. With a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 2A, the 2N5599 is suitable for power switching and amplification circuits. Its wide operating temperature range of -65°C to 200°C (TJ) ensures reliability in harsh environments. This component finds utility in industrial control systems, power supplies, and various high-current switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 200µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 20 W |
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