2N5597
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N5597 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This through-hole component features a TO-66 (TO-213AA) package, optimized for thermal management with a maximum power dissipation of 20 W. It offers a collector-emitter breakdown voltage (Vce) of 60 V and a continuous collector current (Ic) capability of up to 2 A. The 2N5597 is suitable for use in power switching and linear amplification circuits across various industrial sectors, including telecommunications and automotive.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 20 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
JANS2N5666U3
TRANS NPN 200V 5A U3
2C3999
POWER BJT
