2N5584
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5584 is an NPN bipolar junction transistor engineered for high-power applications. This stud-mount device, housed in a TO-63 package, features a maximum collector emitter breakdown voltage of 180 V and a continuous collector current capability of 30 A, with a maximum power dissipation of 175 W. Ideal for demanding power switching and amplification circuits, the 2N5584 finds utility in areas such as industrial motor control, power supplies, and audio amplification systems where robust performance and thermal management are critical. Its TO-63 packaging facilitates efficient heatsinking for sustained operation under heavy loads.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 180 V |
| Power - Max | 175 W |
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