2N5560
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5560 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 120 V collector-emitter breakdown voltage and a continuous collector current capability of up to 30 A, with a maximum power dissipation of 150 W. The 2N5560 is housed in a TO-63 stud mount package (TO-211MB, TO-63-4), facilitating robust thermal management. Its operating temperature range spans from -65°C to 200°C (TJ). This transistor is suitable for power switching and amplification circuits in industrial power supplies, motor control, and audio amplification systems where high current and voltage handling are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 150 W |
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