2N5542
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5542 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount component, housed in a TO-61 package, features a maximum collector emitter breakdown voltage of 130 V and can handle a continuous collector current of up to 10 A. With a maximum power dissipation of 87.5 W, the 2N5542 is well-suited for power switching and amplification circuits. Its robust construction and electrical characteristics make it a reliable choice for industrial control systems, power supplies, and audio amplification equipment. The 2N5542 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 130 V |
| Power - Max | 87.5 W |
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