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2N5541

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2N5541

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology PNP Power BJT, part number 2N5541, is a high-performance bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-5AA (TO-205AA) metal can package, offers a robust 130V collector-emitter breakdown voltage and a continuous collector current capability of 5A, with a maximum power dissipation of 7W. Its wide operating temperature range of -65°C to 200°C (TJ) ensures reliability in diverse environmental conditions. The 2N5541 is commonly utilized in power switching, amplification, and voltage regulation circuits across various industries, including industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-5AA
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)130 V
Power - Max7 W

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