2N5539
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5539 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, housed in a TO-63 package, offers a robust 130 V collector-emitter breakdown voltage and a substantial 20 A collector current capability. With a maximum power dissipation of 175 W, it is well-suited for power switching and amplification tasks in industrial and audio systems. The 2N5539 features a low saturation voltage of 800mV at 1.5mA/10mA for efficient operation. Its wide operating temperature range of -65°C to 200°C (TJ) ensures reliability in harsh environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1.5mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 130 V |
| Power - Max | 175 W |
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