2N5468
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5468 is a high-performance PNP bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a substantial collector-emitter breakdown voltage of 400 V and a continuous collector current capability of 3 A, with a maximum power dissipation of 70 W. Its robust construction and electrical characteristics make it suitable for power switching, amplification, and voltage regulation circuits across various industrial sectors including telecommunications, industrial automation, and power supplies. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 70 W |
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