2N5467
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5467 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance. This component features a high collector-emitter breakdown voltage of 400V and a maximum collector current capability of 3A, supporting a power dissipation of 140W. Packaged in the industry-standard TO-204AA (TO-3) through-hole form factor, the 2N5467 is suitable for demanding applications requiring reliable power handling. Its construction facilitates effective heat dissipation, making it a solid choice for power supply circuits, motor control, and general-purpose amplification in industrial and high-voltage systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 140 W |
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