2N5411
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5411 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 100 V collector-emitter breakdown voltage and a maximum collector current of 5 A, with a power dissipation capability of 52 W. The 2N5411 utilizes a stud mount TO-111 package, facilitating efficient thermal management and robust mechanical integration. Its operating temperature range of -65°C to 200°C (TJ) ensures reliable performance in harsh environments. This robust transistor is frequently employed in power switching, amplification, and regulation circuits across various industrial sectors, including aerospace, defense, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200µA, 2mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 52 W |
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