2N5410
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5410 is a PNP Bipolar Junction Transistor (BJT) designed for demanding power applications. This stud-mount component, housed in a TO-111 package, offers a robust 80 V collector-emitter breakdown voltage and a continuous collector current capability of up to 5 A. With a maximum power dissipation of 52 W and an operating temperature range of -65°C to 200°C, the 2N5410 is suitable for use in power switching and amplification circuits across various industrial sectors. The device features a Vce(sat) of 600mV at 200µA/2mA, supporting efficient power handling.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200µA, 2mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 52 W |
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