2N5409
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5409 is a PNP bipolar junction transistor (BJT) designed for power applications. This stud-mount device, housed in a TO-111 package, offers a collector-emitter breakdown voltage of 100V and a maximum collector current of 5A, with a power dissipation capability of 52W. Its robust construction and electrical characteristics make it suitable for use in industrial control, power switching, and general-purpose amplification circuits. The 2N5409 is a reliable component for applications demanding efficient power handling and stable performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 52 W |
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