2N5408
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
This Microchip Technology PNP bipolar junction transistor, part number 2N5408, is designed for high-power applications. Featuring a robust 80 V collector-emitter breakdown voltage and a maximum collector current capability of 5 A, this device is rated for 52 W of power dissipation. It utilizes a stud mount configuration within a TO-111 package. The wide operating temperature range of -65°C to 200°C (TJ) makes it suitable for demanding environments. This component is commonly employed in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 52 W |
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