2N5406
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5406 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This through-hole component, housed in a TO-205AA (TO-3) metal can package, offers a maximum collector current of 5A and a collector-emitter breakdown voltage of 80V. With a maximum power dissipation of 7W and an operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The 2N5406 exhibits a Vce(sat) of 600mV at 200µA base current and 2mA collector current. This device finds application in industrial control systems, power supply regulation, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200µA, 2mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 7 W |
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