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2N5404

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2N5404

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N5404 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component features a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 80 V. The device dissipates up to 7 W of power and operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a TO-205AA (TO-5-3 Metal Can), the 2N5404 is suitable for use in power switching and amplification circuits. Its saturation voltage (Vce Sat) is specified at a maximum of 600mV at 200µA collector current and 2mA base current. This component finds application in various industrial and consumer electronics where robust power handling is required.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 200µA, 2mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-5AA
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max7 W

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