2N5404
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5404 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component features a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 80 V. The device dissipates up to 7 W of power and operates across a wide temperature range of -65°C to 200°C (TJ). Packaged in a TO-205AA (TO-5-3 Metal Can), the 2N5404 is suitable for use in power switching and amplification circuits. Its saturation voltage (Vce Sat) is specified at a maximum of 600mV at 200µA collector current and 2mA base current. This component finds application in various industrial and consumer electronics where robust power handling is required.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200µA, 2mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 7 W |
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