2N5386
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5386 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-61 stud mount package, enabling efficient thermal management with a maximum power dissipation of 50 W. It boasts a collector-emitter breakdown voltage (Vce) of 80 V and can handle a continuous collector current (Ic) of up to 12 A, making it suitable for power switching and amplification circuits. The device operates across a wide temperature range, from -65°C to 200°C (TJ), ensuring reliability in harsh environments. The 2N5386 is commonly found in industrial power control, automotive systems, and general-purpose power amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 50 W |
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