2N5346
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5346 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a robust 80 V collector-emitter breakdown voltage and a continuous collector current capability of 7 A, supporting up to 60 W of power dissipation. The 2N5346 utilizes a stud mount package, specifically the TO-59, facilitating efficient thermal management and secure mounting in power control circuits. Its construction is suitable for use in industrial power supplies, motor control systems, and high-current switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-210AA, TO-59-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-59 |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 60 W |
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