2N5339T3
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5339T3 is an NPN power bipolar junction transistor (BJT) designed for demanding applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 5A, with a power dissipation rating of 1W. The specified Vce(sat) is 1.2V at 500mA base current and 5A collector current, and the minimum DC current gain (hFE) is 60 at 2A collector current and 2V collector-emitter voltage. The collector leakage current (Icbo) is rated at a maximum of 100µA. The 2N5339T3 is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. Its robust construction and operating temperature range of -55°C to 200°C make it appropriate for use in industrial, automotive, and general-purpose power amplification and switching circuits. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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