2N5339QFN
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology 2N5339QFN is an NPN bipolar junction transistor (BJT) designed for power applications. This device offers a collector-emitter breakdown voltage (Vce(max)) of 100V and can handle a continuous collector current (Ic(max)) of 5A. Its maximum power dissipation is rated at 1W. Key specifications include a minimum DC current gain (hFE) of 60 at 2A collector current and 2V collector-emitter voltage, and a saturation voltage (Vce(sat)(max)) of 1.2V at 500mA base current and 5A collector current. The collector cutoff current (Icbo(max)) is specified at 100µA. This component is housed in a TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. The operating temperature range is from -55°C to 200°C. This transistor finds application in various industrial and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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