2N5330
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5330 is a high-power PNP bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This component features a 90V collector-emitter breakdown voltage and a continuous collector current capability of 20A, with a maximum power dissipation of 140W. The 2N5330 utilizes a TO-61 stud mount package, ensuring efficient thermal management in demanding environments. Its construction is suitable for applications across industrial control, power supply regulation, and high-fidelity audio amplification where reliable, high-current switching is essential. The transistor type is PNP, and the operating junction temperature range is from -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 140 W |
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