2N5329
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's PNP Bipolar Junction Transistor (BJT), part number 2N5329, is designed for high-power applications. This device features a 90V collector-emitter breakdown voltage and can handle a continuous collector current of up to 20A, with a maximum power dissipation of 113W. The 2N5329 is packaged in a TO-61 stud mount configuration, facilitating efficient thermal management. Its operating temperature range is -65°C to 200°C (TJ). This component is commonly found in power supply regulation, audio amplification, and general-purpose switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 113 W |
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