2N5315
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5315 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a substantial collector current capability of up to 20 A and a maximum power dissipation of 87 W, making it suitable for robust power switching and amplification circuits. The 2N5315 operates with a collector-emitter breakdown voltage of 100 V and includes a stud mount package for effective thermal management, compatible with TO-61, TO-211MA, and TO-210AC form factors. Its wide operating temperature range of -65°C to 200°C (TJ) ensures reliability in diverse environmental conditions. This component is commonly utilized in industrial power control, automotive electronics, and high-fidelity audio amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 87 W |
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