2N5314
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5314 is a high-power PNP bipolar junction transistor (BJT) engineered for demanding applications. This device features a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 20A, with a power dissipation capability of 87.5W. The 2N5314 utilizes a reliable TO-61 stud mount package for efficient thermal management. Its robust construction and specifications make it suitable for use in power switching, linear amplification, and motor control circuits across industrial and automotive sectors. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 87.5 W |
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