2N5313
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N5313 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, housed in a TO-61 package, offers a robust 80 V collector-emitter breakdown voltage and a substantial 20 A collector current capability. With a maximum power dissipation of 87 W and an operating junction temperature range of -65°C to 200°C, the 2N5313 is well-suited for power switching and amplification circuits in industrial control, automotive, and high-fidelity audio systems. The transistor exhibits a saturation voltage of 1.5 V at 1 mA base current and 10 mA collector current, ensuring efficient operation in power-handling scenarios.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 87 W |
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